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IXDI509 / IXDN509
9 Ampere Low-Side Ultrafast MOSFET Drivers
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up protected up to 9 Amps
? High 9A peak output current
? Wide operating range: 4.5V to 30V
? - 55°C to +125°C extended operating
temperature
? High capacitive load drive
capability: 1800pF in <15ns
? Matched rise and fall times
? Low propagation delay time
? Low output impedance
General Description
The IXDI509 and IXDN509 are high speed high current gate
drivers specifically designed to drive the largest IXYS
MOSFETs & IGBTs to their minimum switching time and
maximum practical frequency limits. The IXDI509 and
IXDN509 can source and sink 9 Amps of peak current while
producing voltage rise and fall times of less than 30ns. The
inputs of the drivers are compatible with TTL or CMOS and
are virtually immune to latch up over the entire operating
range. Patented* design innovations eliminate cross
conduction and current "shoot-through". Improved speed
and drive capabilities are further enhanced by matched rise
and fall times.
? Low supply current
The IXDI509 is configured as a Inverting Gate Driver, and the
Applications
IXDN509 is configured as a Non-Inverting Gate Driver.
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?
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?
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?
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Driving MOSFETs and IGBTs
Motor controls
Line drivers
Pulse generators
Local power ON/OFF switch
Switch Mode Power Supplies (SMPS)
DC to DC converters
Pulse transformer driver
Class D switching amplifiers
Power charge pumps
The IXDI509 and IXDN509 are each available in the 8-Pin P-
DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
6-Lead DFN (D1) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number
IXDI509PI
IXDI509SIA
IXDI509SIAT/R
IXDI509D1
IXDI509D1T/R
IXDN509PI
IXDN509SIA
IXDN509SIAT/R
IXDN509D1
IXDN509D1T/R
Description
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
Package
Type
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
Packing Style
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Pack
Qty
50
94
2500
56
2500
50
94
2500
56
2500
Configuration
Inverting
Non-Inverting
NOTE: All parts are lead-free and RoHS Compliant
Copyright ? 2007 IXYS CORPORATION All rights reserved
First Release
DS99670A(10/07)
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相关代理商/技术参数
IXDN509PI 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN509SIA 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN509SIAT/R 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN50N120AU1 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT with Diode(Short Circuit SOA Capability)
IXDN514 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers
IXDN514D1 功能描述:功率驱动器IC LS MOSFET DRVR 35V, 14A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN514D1T/R 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN514D1TR 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers